CPC H01L 23/50 (2013.01) [G06F 30/39 (2020.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01)] | 20 Claims |
1. An integrated circuit comprising:
two parallel active zones extending in a first direction, including a p-type active zone located in an n-type well and an n-type active zone located in a p-type well, wherein each of the p-type active zone and the n-type active zone includes a channel region between a source or a drain aligned along the first direction, and wherein the p-type active zone having channel regions is separated from the n-type active zone having channel regions along a second direction that is different from the first direction;
an n-type pick-up region located in the n-type well, wherein an n-type dopant concentration of the n-type pick-up region is higher than an n-type dopant concentration of the n-type well;
a p-type pick-up region located in the p-type well, wherein a p-type dopant concentration of the p-type pick-up region is higher than a p-type dopant concentration of the p-type well;
a first power rail and a second power rail extending in the first direction, wherein the first power rail, the p-type active zone, the n-type active zone, and the second power rail are arranged along the second direction such that the p-type active zone is between the first power rail and the n-type active zone while the n-type active zone is between the p-type active zone and the second power rail; and
a first conductive segment and a second conductive segment extending in the second direction, wherein the n-type pick-up region is conductively connected to the first power rail with the first conductive segment, and the p-type pick-up region is conductively connected to the second power rail with the second conductive segment;
a first gate-strip and a second gate-strip extending in the second direction, wherein the first gate-strip overlaps the n-type pick-up region and the second gate-strip overlaps the p-type pick-up region;
a first dummy gate extending in the second direction over the p-type active zone; and
a second dummy gate extending in the second direction over the n-type active zone.
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