US 12,334,428 B2
Cell having stacked pick-up region
Chung-Hui Chen, Hsinchu (TW); and Hao-Chieh Chan, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 18, 2023, as Appl. No. 18/155,914.
Application 18/155,914 is a division of application No. 16/660,363, filed on Oct. 22, 2019, granted, now 11,562,953.
Claims priority of provisional application 62/749,578, filed on Oct. 23, 2018.
Prior Publication US 2023/0154842 A1, May 18, 2023
Int. Cl. H01L 23/50 (2006.01); G06F 30/39 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 23/50 (2013.01) [G06F 30/39 (2020.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
two parallel active zones extending in a first direction, including a p-type active zone located in an n-type well and an n-type active zone located in a p-type well, wherein each of the p-type active zone and the n-type active zone includes a channel region between a source or a drain aligned along the first direction, and wherein the p-type active zone having channel regions is separated from the n-type active zone having channel regions along a second direction that is different from the first direction;
an n-type pick-up region located in the n-type well, wherein an n-type dopant concentration of the n-type pick-up region is higher than an n-type dopant concentration of the n-type well;
a p-type pick-up region located in the p-type well, wherein a p-type dopant concentration of the p-type pick-up region is higher than a p-type dopant concentration of the p-type well;
a first power rail and a second power rail extending in the first direction, wherein the first power rail, the p-type active zone, the n-type active zone, and the second power rail are arranged along the second direction such that the p-type active zone is between the first power rail and the n-type active zone while the n-type active zone is between the p-type active zone and the second power rail; and
a first conductive segment and a second conductive segment extending in the second direction, wherein the n-type pick-up region is conductively connected to the first power rail with the first conductive segment, and the p-type pick-up region is conductively connected to the second power rail with the second conductive segment;
a first gate-strip and a second gate-strip extending in the second direction, wherein the first gate-strip overlaps the n-type pick-up region and the second gate-strip overlaps the p-type pick-up region;
a first dummy gate extending in the second direction over the p-type active zone; and
a second dummy gate extending in the second direction over the n-type active zone.