US 12,334,416 B2
Through substrate via (TSV) validation structure for an integrated circuit and method to form the TSV validation structure
Darrell Glenn Hill, Chandler, AZ (US)
Assigned to NXP USA, Inc., Austin, TX (US)
Filed by NXP USA, Inc., Austin, TX (US)
Filed on Oct. 19, 2023, as Appl. No. 18/489,915.
Application 18/489,915 is a division of application No. 17/351,440, filed on Jun. 18, 2021, granted, now 11,823,978.
Prior Publication US 2024/0047309 A1, Feb. 8, 2024
Int. Cl. H01L 23/48 (2006.01); G01R 27/02 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 64/23 (2025.01)
CPC H01L 23/481 (2013.01) [G01R 27/02 (2013.01); H01L 21/76898 (2013.01); H01L 22/14 (2013.01); H01L 23/5286 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01)] 7 Claims
OG exemplary drawing
 
1. A method comprising:
applying a mask to a first surface of a substrate that includes a second surface, and patterning the mask to have a first opening and a second opening;
etching the substrate through the first opening and the second opening for a same etching time to form a first via and a second via respectively;
forming a first conductive material on an interior of the etched substrate within the first via to form a conductive path between the first surface and the second surface; and
forming a second conductive material on an interior of the etched substrate within the second via to form a conductive path from the first surface to the second surface;
wherein the first opening is larger than the second opening;
wherein a cross sectional area of the first via is elliptical in shape based on a cross section of the first via parallel to the first surface and a cross sectional area of the second via is circular in shape based on a cross section of the second via parallel to the first surface.