US 12,334,410 B2
Semiconductor device with protective film for reducing aluminum slide in aluminum wiring and manufacturing method thereof
Takashi Aoki, Tokyo (JP); and Takehiro Ueda, Tokyo (JP)
Assigned to RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed by RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed on Nov. 21, 2022, as Appl. No. 18/057,326.
Claims priority of application No. 2022-012760 (JP), filed on Jan. 31, 2022.
Prior Publication US 2023/0245941 A1, Aug. 3, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/02 (2006.01)
CPC H01L 23/3192 (2013.01) [H01L 21/022 (2013.01); H01L 23/3171 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an aluminum layer;
a passivation film; and
a protective film arranged between the aluminum layer and the passivation film,
wherein the aluminum layer includes a plurality of aluminum regions,
wherein the protective film includes portions that are respectively formed on the aluminum regions,
wherein a width of a gap between the adjacent aluminum regions is equal to or less than twice a thickness of the portions of the protective film, and
wherein the gap is filled with the protective film.