CPC H01L 23/3192 (2013.01) [H01L 21/022 (2013.01); H01L 23/3171 (2013.01)] | 9 Claims |
1. A semiconductor device comprising:
an aluminum layer;
a passivation film; and
a protective film arranged between the aluminum layer and the passivation film,
wherein the aluminum layer includes a plurality of aluminum regions,
wherein the protective film includes portions that are respectively formed on the aluminum regions,
wherein a width of a gap between the adjacent aluminum regions is equal to or less than twice a thickness of the portions of the protective film, and
wherein the gap is filled with the protective film.
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