US 12,334,408 B2
Semiconductor device and method for manufacturing semiconductor device
Naoki Yoshimatsu, Tokyo (JP); and Nobuyoshi Kimoto, Fukuoka (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/757,938
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Mar. 19, 2020, PCT No. PCT/JP2020/012175
§ 371(c)(1), (2) Date Jun. 23, 2022,
PCT Pub. No. WO2021/186657, PCT Pub. Date Sep. 23, 2021.
Prior Publication US 2023/0045523 A1, Feb. 9, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/3142 (2013.01) [H01L 24/18 (2013.01); H01L 24/48 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/1811 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a heat spreader;
a semiconductor element provided on an upper surface of the heat spreader;
an insulating sheet provided on a lower surface of the heat spreader;
a lead frame joined to an upper surface of the semiconductor element via solder; and
a molding resin that seals one end side of the lead frame, the semiconductor element, the heat spreader, and the insulating sheet,
wherein a hole is formed from an upper surface of the molding resin to a joining surface of the lead frame with the semiconductor element, and
wherein the hole is filled with a low Young's modulus resin having a Young's modulus lower than a Young's modulus of the molding resin.