US 12,334,403 B2
Measuring method of resistivity of a wafer
Xing Wei, Shanghai (CN); Minghao Li, Shanghai (CN); and Zhongying Xue, Shanghai (CN)
Assigned to Zing Semiconductor Corporation, Shanghai (CN); and SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Filed by Zing Semiconductor Corporation, Shanghai (CN); and SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Filed on Dec. 8, 2021, as Appl. No. 17/545,742.
Claims priority of application No. 202110910092.7 (CN), filed on Aug. 9, 2021.
Prior Publication US 2023/0040616 A1, Feb. 9, 2023
Int. Cl. H01L 21/66 (2006.01); G01R 27/02 (2006.01)
CPC H01L 22/14 (2013.01) [G01R 27/02 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A measuring method of resistivity of a wafer, comprising:
choosing a wafer to be measured;
conducting a thermal treatment for the wafer to remove a thermal doner in the wafer;
conducting an oxidation process for the wafer to form an oxidized surface on the wafer;
measuring resistivity of the wafer; and
cooling the wafer until a room temperature after conducting the oxidation process,
wherein the resistivity of the wafer exceeds 500 ohm-cm.