US 12,334,401 B2
Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
Hideto Tateno, Toyama (JP); and Satoshi Takano, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 17, 2021, as Appl. No. 17/478,321.
Application 17/478,321 is a continuation of application No. PCT/JP2019/012282, filed on Mar. 22, 2019.
Prior Publication US 2022/0005738 A1, Jan. 6, 2022
Int. Cl. H01L 21/66 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01)
CPC H01L 22/12 (2013.01) [C23C 16/34 (2013.01); C23C 16/455 (2013.01); C23C 16/52 (2013.01); H01L 21/02186 (2013.01); H01L 21/285 (2013.01); H01L 21/67248 (2013.01); H01L 21/67757 (2013.01); C23C 16/46 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a reaction tube in which a substrate is accommodated;
a heater configured to heat an inside of the reaction tube;
a gas supplier configured to supply a process gas to the substrate accommodated in the reaction tube;
an exhauster configured to exhaust the process gas from the inside of the reaction tube;
a temperature detector configured to measure an inner temperature of the reaction tube;
a reflectance detector configured to measure a reflectance of a film formed by supplying the process gas through the gas supplier; and
a controller configured to be capable of performing a feedback control of film-forming conditions on the substrate accommodated in the reaction tube by using temperature information measured by the temperature detector and reflectance information measured by the reflectance detector,
wherein the controller comprises:
a memory in which relationships between the inner temperature of the reaction tube measured by the temperature detector and a temperature of the substrate accommodated in the reaction tube are stored as temperature control coefficients respectively for thicknesses of the film formed on a wall of the reaction tube; and
an operation processor configured to: select, from the temperature control coefficients, a temperature control coefficient corresponding to a thickness calculated from the reflectance measured by the reflectance detector; and correct the inner temperature of the reaction tube by using the temperature control coefficient selected by the operation processor.