US 12,334,398 B2
Multilayer dielectric stack for damascene top-via integration
Sagarika Mukesh, Albany, NY (US); Devika Sarkar Grant, Rensselaer, NY (US); Fee Li Lie, Albany, NY (US); Shravan Kumar Matham, Guilderland, NY (US); Hosadurga Shobha, Niskayuna, NY (US); and Gauri Karve, Cohoes, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 23, 2021, as Appl. No. 17/445,698.
Prior Publication US 2023/0055600 A1, Feb. 23, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 21/76885 (2013.01) [H01L 21/76802 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A back-end-of-line (BEOL) component, comprising:
a substrate;
a first layer of dielectric material arranged on the substrate, the first layer of dielectric material including trench openings, wherein the trench openings are lined with a liner material in direct contact with at least a portion of the substrate;
a first layer of metal material forming interconnect lines arranged in the trench openings;
an etch stop layer arranged on top of the first layer of dielectric material, wherein the first layer of metal material is separated from both the first layer of dielectric material and the etch stop layer by the liner material;
a second layer of metal material in direct contact with the first layer of metal material, the second layer of metal material including at least one projection extending above the etch stop layer, the at least one projection having a shape with at least 2 sidewalls that are coplanar with respective elongated sidewalls of at least one of the interconnect lines of the first layer of metal;
a second layer of dielectric material arranged on top of the etch stop layer, in direct contact with at least a portion of an upper surface of the first layer of metal material, and laterally surrounding the at least one projection; and
a dielectric cap arranged in direct contact with the substrate and in direct contact with the first layer of dielectric material.