US 12,334,397 B2
Interconnect structure including graphite and method forming same
Shu-Cheng Chin, Hsinchu (TW); Chih-Yi Chang, New Taipei (TW); Wei Hsiang Chan, Hsinchu (TW); Chih-Chien Chi, Hsinchu (TW); Chi-Feng Lin, Hsinchu (TW); and Hung-Wen Su, Jhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 21, 2021, as Appl. No. 17/382,001.
Claims priority of provisional application 63/188,187, filed on May 13, 2021.
Prior Publication US 2022/0367266 A1, Nov. 17, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76885 (2013.01) [H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/7684 (2013.01); H01L 23/5226 (2013.01); H01L 23/53276 (2013.01); H01L 21/31053 (2013.01); H01L 21/32136 (2013.01); H01L 23/53238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first conductive feature;
depositing a graphite layer over the first conductive feature;
patterning the graphite layer to form a graphite conductive feature;
depositing a dielectric spacer layer on the graphite layer;
depositing a first dielectric layer over the dielectric spacer layer;
planarizing the first dielectric layer, wherein the planarizing the first dielectric layer stops on a top surface of a horizontal portion of the dielectric spacer layer, with the horizontal portion being overlapping the graphite conductive feature;
forming a second dielectric layer over the first dielectric layer; and
forming a second conductive feature in the second dielectric layer, wherein the second conductive feature is over the graphite conductive feature and penetrates through the horizontal portion of the dielectric spacer layer to be electrically connected to the graphite conductive feature.