US 12,334,394 B2
Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metal
Suketu Parikh, San Jose, CA (US); Mihaela A. Balseanu, Santa Clara, CA (US); Bhaskar Jyoti Bhuyan, Milpitas, CA (US); Ning Li, San Jose, CA (US); Mark Joseph Saly, Milpitas, CA (US); Aaron Michael Dangerfield, San Jose, CA (US); David Thompson, Santa Clara, CA (US); and Abhijit B. Mallick, Fremont, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 13, 2022, as Appl. No. 17/719,502.
Claims priority of provisional application 63/219,513, filed on Jul. 8, 2021.
Prior Publication US 2023/0010568 A1, Jan. 12, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/76834 (2013.01) [H01L 21/02126 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/02205 (2013.01); H01L 21/31111 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber;
b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition;
c) depositing an organo-aluminum precursor while supplying water to form an aluminum oxide (AlO) layer on the dielectric layer;
d) supplying at least one of hydrogen (H2) or ammonia (NH3) to remove the self-assembled monolayer (SAM); and
e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the aluminum oxide (AlO) layer on the dielectric layer.