US 12,334,391 B2
Method for patterning a substrate using photolithography
Katie Lutker-Lee, Albany, NY (US); Angelique Raley, Albany, NY (US); and Nicholas Joy, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Dec. 17, 2021, as Appl. No. 17/644,932.
Prior Publication US 2023/0197505 A1, Jun. 22, 2023
Int. Cl. H01L 21/768 (2006.01); G03F 1/22 (2012.01); G03F 7/095 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01)
CPC H01L 21/76811 (2013.01) [G03F 1/22 (2013.01); G03F 7/095 (2013.01); G03F 7/2004 (2013.01); H01L 21/0274 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for patterning a substrate, the method comprising:
forming a first photoresist etch mask with an extreme ultraviolet (EUV) lithography process, the first photoresist etch mask comprising first through openings, the first photoresist etch mask comprising a metal-based photoresist material;
forming a second photoresist etch mask over the first photoresist etch mask, the second photoresist etch mask comprising second through openings; and
forming first openings, through the first and the second photoresist etch masks, in a region of the substrate that vertically overlaps both the first through openings and the second through openings.