| CPC H01L 21/76224 (2013.01) [H10D 30/031 (2025.01); H10D 84/83 (2025.01); H01L 21/28247 (2013.01); H10D 30/6735 (2025.01); H10D 64/017 (2025.01)] | 20 Claims |
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1. A method, comprising:
providing a workpiece comprising:
an active region protruding from a substrate,
a first placeholder gate and a second placeholder gate over channel regions of the active region, and
a source/drain feature disposed between the channel regions;
removing a portion of the first placeholder gate and a portion of the substrate thereunder to form an isolation trench;
forming a dielectric feature in the isolation trench, wherein a top surface of the dielectric feature is coplanar with a top surface of the second placeholder gate;
replacing the second placeholder gate with a metal gate stack;
selectively recessing the dielectric feature, thereby forming a recessed dielectric feature;
forming a first capping layer directly over the metal gate stack and a second capping layer over the recessed dielectric feature; and
forming a source/drain contact over and electrically coupled to the source/drain feature.
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