US 12,334,382 B2
Overlay measurement device and method, and system and program therefor
Sol-Lee Hwang, Hwaseong-si (KR); Hee-Chul Lim, Hwaseong-si (KR); Dong-Won Jung, Hwaseong-si (KR); Min-Ho Lee, Hwaseong-si (KR); and Hyun-Kyoo Shon, Hwaseong-si (KR)
Assigned to AUROS TECHNOLOGY, INC., Hwaseong-si (KR)
Filed by AUROS TECHNOLOGY, INC., Hwaseong-si (KR)
Filed on Feb. 6, 2024, as Appl. No. 18/433,499.
Application 18/433,499 is a continuation of application No. 18/227,652, filed on Jul. 28, 2023, granted, now 12,009,243.
Claims priority of application No. 10-2022-0133289 (KR), filed on Oct. 17, 2022.
Prior Publication US 2024/0186169 A1, Jun. 6, 2024
Int. Cl. H01L 21/68 (2006.01)
CPC H01L 21/681 (2013.01) 9 Claims
OG exemplary drawing
 
1. An overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed on different layers of a wafer, the overlay measurement device comprising:
a light source;
an aperture that changes a beam from the light source to be suitable for photographing the first overlay mark or the second overlay mark;
a detector for obtaining an image of the first overlay mark or an image of the second overlay mark;
a transmission and receipt part; and
a processor connecting to the transmission and receipt part electrically,
wherein the processor is configured to:
obtain data transmitted from a user terminal through the transmission and receipt part,
analyze a recipe included in the data,
perform optimization of measurement options of a wafer, based on the recipe, after the recipe is analyzed,
measure an aperture in a first pinhole position,
measure the aperture in a second pinhole position that is a predetermined distance apart from the first pinhole position once,
calculate Tis 3 Sigma in the first pinhole position and the second pinhole position, and
perform a pinhole optimization process of selecting a pinhole position where the Tis 3 Sigma is a minimum by modeling the Tis 3 Sigma in each pinhole position in relation to the aperture.