| CPC H01L 21/67092 (2013.01) [H01L 21/6838 (2013.01); H01L 21/78 (2013.01)] | 14 Claims |

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1. A method for cleaving a semiconductor structure having a top surface and a bottom surface generally parallel to the top surface, the method comprising:
contacting the top surface of the semiconductor structure with a suction cup;
applying a vacuum in the suction cup to grasp the top surface of the semiconductor structure;
moving a cleave arm from a starting position to a raised position to cause a spring member to exert a cleave force on the semiconductor structure, the spring member storing spring energy when the cleave arm is raised, the suction cup being connected to a suction rod that extends through the cleave arm, the suction rod extending through the spring member, the cleave arm moving axially upward relative to the suction rod when the cleave arm is moved to the raised position;
contacting the semiconductor structure with a blade to initiate cleaving the semiconductor structure when the cleave arm is in the raised position; and
releasing the stored spring energy after contacting the semiconductor structure with the blade to separate the semiconductor structure along a cleave plane into two pieces, the suction rod moving axially downward relative to the cleave arm when the semiconductor structure is separated into two pieces.
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