US 12,334,367 B2
Method and apparatus for removing particles or photoresist on substrates
Xiaoyan Zhang, Shanghai (CN); Wenjun Wang, Shanghai (CN); Fuping Chen, Shanghai (CN); Jun Wang, Shanghai (CN); Shena Jia, Shanghai (CN); Deyun Wang, Shanghai (CN); Hui Wang, Shanghai (CN); Guangyu Xia, Shanghai (CN); and He Wang, Shanghai (CN)
Assigned to ACM RESEARCH (SHANGHAI), INC., Shanghai (CN)
Appl. No. 17/920,665
Filed by ACM RESEARCH (SHANGHAI), INC., Shanghai (CN)
PCT Filed Apr. 21, 2020, PCT No. PCT/CN2020/085948
§ 371(c)(1), (2) Date Oct. 21, 2022,
PCT Pub. No. WO2021/212330, PCT Pub. Date Oct. 28, 2021.
Prior Publication US 2023/0143401 A1, May 11, 2023
Int. Cl. H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/6704 (2013.01) [H01L 21/3105 (2013.01); H01L 21/67086 (2013.01)] 32 Claims
OG exemplary drawing
 
1. A method for removing particles or photoresist on substrates, comprising:
transferring one or more substrates into a DIO3 solution accommodated in a DIO3 bath;
after the one or more substrates are processed in the DIO3 bath, taking the one or more substrates out from the DIO3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath;
after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates;
transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process;
wherein before the one or more substrates are transferred to the DIO3 bath, the liquid in the DIO3 bath is DIW, and further comprising:
opening a shutter of the DIO3 bath, transferring the one or more substrates into the DIW in the DIO3 bath, closing the shutter of the DIO3 bath;
overflowing an DIO3 solution from a bottom of the DIO3 bath to replace the DIW in the DIO3 bath, wherein ozone concentration of the DIO3 solution is 30 ppm to 120 ppm;
after the DIO3 bath is full of the DIO3 solution, keeping the DIO3 solution overflowing for 5 to 15 min;
quick dump drain the DIO3 solution;
filling the DIO3 bath with pure DIW; and
opening the shutter of the DIO3 bath, taking the one or more substrates out from the DIO3 bath.