US 12,334,361 B2
Substrate structure, and fabrication and packaging methods thereof
Xinru Zeng, Wuhan (CN); Peng Chen, Wuhan (CN); and Houde Zhou, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Apr. 25, 2023, as Appl. No. 18/139,141.
Application 18/139,141 is a continuation of application No. 17/202,498, filed on Mar. 16, 2021, granted, now 11,694,904.
Application 17/202,498 is a continuation of application No. PCT/CN2021/073708, filed on Jan. 26, 2021.
Prior Publication US 2023/0268197 A1, Aug. 24, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 21/486 (2013.01) [H01L 21/481 (2013.01); H01L 21/4853 (2013.01); H01L 23/49827 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate structure, comprising:
a core substrate, a plurality of conductive pads and a plurality of device-contact pads at a first surface of the core substrate, and a plurality of packaging pads at a second surface of the core substrate opposite to the first surface, one of the plurality of packaging pads being connected to a semiconductor chip;
a conductive structure formed on each of the plurality of conductive pads;
a semiconductor device connected to at least one device-contact pad of the plurality of device-contact pads; and
a molding compound on the first surface of the core substrate and encapsulating the conductive structure and the semiconductor device,
wherein the conductive structure comprises a solder ball in direct contact with one of the plurality of conductive pads and protruding from an external surface of the substrate structure, a portion of the solder ball is uncovered, and another portion of the solder ball is embedded into the molding compound.