US 12,334,358 B2
Integration processes utilizing boron-doped silicon materials
Takehito Koshizawa, San Jose, CA (US); Karthik Janakiraman, San Jose, CA (US); Rui Cheng, San Jose, CA (US); Krishna Nittala, San Jose, CA (US); Menghui Li, Mountain View, CA (US); Ming-Yuan Chuang, Boise, ID (US); Susumu Shinohara, Yokohama (JP); Juan Guo, San Jose, CA (US); Xiawan Yang, San Jose, CA (US); Russell Chin Yee Teo, Palo Alto, CA (US); Zihui Li, Santa Clara, CA (US); Chia-Ling Kao, San Jose, CA (US); Qu Jin, Santa Clara, CA (US); and Anchuan Wang, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 18, 2021, as Appl. No. 17/378,720.
Claims priority of provisional application 63/053,693, filed on Jul. 19, 2020.
Prior Publication US 2022/0020599 A1, Jan. 20, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/3205 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32146 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01J 37/32091 (2013.01); H01J 2237/334 (2013.01); H01L 21/32055 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A processing method comprising:
depositing a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber;
etching portions of the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate; and
removing remaining portions of the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor at a rate of greater than 70 nm/min.