US 12,334,357 B2
Method of forming material layer
Kyung-Eun Byun, Seongnam-si (KR); Sangwoo Kim, Yongin-si (KR); Minsu Seol, Seoul (KR); Hyeonjin Shin, Suwon-si (KR); Minseok Shin, Suwon-si (KR); Pin Zhao, Suwon-si (KR); Taehyeong Kim, Suwon-si (KR); and Jaehwan Jung, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and Research & Business Foundation Sungkyunkwan University, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed on Dec. 10, 2021, as Appl. No. 17/547,626.
Claims priority of application No. 10-2021-0016843 (KR), filed on Feb. 5, 2021.
Prior Publication US 2022/0254643 A1, Aug. 11, 2022
Int. Cl. C23C 14/06 (2006.01); H01J 37/34 (2006.01); H01L 21/308 (2006.01)
CPC H01L 21/3083 (2013.01) [C23C 14/0623 (2013.01); H01J 37/3405 (2013.01); H01J 37/3426 (2013.01); H01J 37/3497 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a material film, the method comprising:
providing a non-photosensitive mask on a substrate, the non-photosensitive mask exposing a partial region of the substrate;
forming a material film on the partial region of the substrate using a sputtering process;
removing the non-photosensitive mask from the substrate; and
heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere to provide a heat-treated material film, wherein
the heat-treated material film is a ternary material film including a transition metal and a chalcogen element.