US 12,334,356 B2
Plasma etching tools and systems
Minjoon Park, Watervliet, NY (US); and Andrew Metz, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 6, 2022, as Appl. No. 17/832,897.
Prior Publication US 2023/0395385 A1, Dec. 7, 2023
Int. Cl. H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/3065 (2013.01) [H01J 37/32642 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma etching system for a substrate comprising:
an etch chamber;
a substrate holder disposed in the etch chamber;
a top electrode disposed in the etch chamber, the top electrode having a surface comprising a first refractory metal;
a bottom electrode connected to the substrate holder;
a first radio frequency (RF) power source connected to the bottom electrode, the first RF power source being configured to generate a plasma in the etch chamber and to sputter the first refractory metal from the surface of the top electrode; and
a focus ring disposed on the substrate holder and configured to surround the substrate, the focus ring having a top surface coated with a second refractory metal, the second refractory metal being a second source of refractory metal for metal sputtering, the first refractory metal and the second refractory metal being different refractory metals.