US 12,334,354 B2
Sidewall passivation for plasma etching
Zhonghua Yao, Santa Clara, CA (US); Qian Fu, Pleasanton, CA (US); Aaron Eppler, Los Gatos, CA (US); and Mukund Srinivasan, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 1, 2022, as Appl. No. 17/590,084.
Prior Publication US 2023/0245895 A1, Aug. 3, 2023
Int. Cl. H01L 21/3065 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/3065 (2013.01) [H01L 21/02129 (2013.01); H01L 21/02205 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor processing method comprising:
depositing a boron-containing material on a substrate, wherein a carbon-containing mask is disposed along at least a portion of the substrate, wherein a patterned silicon-containing material is disposed along the carbon-containing mask, and wherein the boron-containing material extends along sidewalls of one or more features in the carbon-containing mask;
forming a plasma of an oxygen-containing precursor; and
contacting the substrate with plasma effluents of the oxygen-containing precursor, wherein the contacting etches a portion of the one or more features in the carbon-containing mask, and wherein the contacting oxidizes the boron-containing material.