US 12,334,351 B2
Molybdenum deposition
Jeong-Seok Na, San Jose, CA (US); Yao-Tsung Hsieh, San Jose, CA (US); Chiukin Steven Lai, Sunnyvale, CA (US); and Patrick A. Van Cleemput, Duvall, WA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/639,846
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Sep. 1, 2020, PCT No. PCT/US2020/048951
§ 371(c)(1), (2) Date Mar. 2, 2022,
PCT Pub. No. WO2021/046058, PCT Pub. Date Mar. 11, 2021.
Claims priority of provisional application 62/895,407, filed on Sep. 3, 2019.
Prior Publication US 2022/0328317 A1, Oct. 13, 2022
Int. Cl. H01L 21/285 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/28568 (2013.01) [C23C 16/0245 (2013.01); C23C 16/045 (2013.01); C23C 16/08 (2013.01); C23C 16/45553 (2013.01); H01L 21/76879 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method comprising:
providing a substrate comprising a feature having a feature bottom and feature sidewalls, wherein the feature bottom comprises a metal or metal nitride surface and the feature sidewalls comprise oxide surfaces; and
performing multiple cycles of an atomic layer deposition (ALD) process to selectively deposit a molybdenum (Mo) film on the metal or metal nitride surface relative to the oxide surfaces, wherein the ALD process comprises exposing the feature to alternate pulses of molybdenum-containing oxyhalide precursor and a reducing agent at a first substrate temperature, further comprising, partially filling the feature while the substrate is at the first substrate temperature, and completely filling the feature while the substrate is at a second substrate temperature, the second substrate temperature being greater than the first substrate temperature.