US 12,334,349 B2
Semiconductor device having work function metal stack
Yen-Yu Chen, Kaohsiung (TW); Yu-Chi Lu, Hsinchu (TW); Chih-Pin Tsao, Hsinchu County (TW); and Shih-Hsun Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Feb. 27, 2024, as Appl. No. 18/588,783.
Application 18/588,783 is a continuation of application No. 18/066,203, filed on Dec. 14, 2022, granted, now 11,948,800.
Application 18/066,203 is a continuation of application No. 17/549,673, filed on Dec. 13, 2021, granted, now 11,823,908, issued on Nov. 21, 2023.
Application 17/549,673 is a continuation of application No. 16/701,009, filed on Dec. 2, 2019, granted, now 11,201,059, issued on Dec. 14, 2021.
Application 16/701,009 is a continuation of application No. 15/965,635, filed on Apr. 27, 2018, granted, now 10,497,571, issued on Dec. 3, 2019.
Prior Publication US 2024/0203738 A1, Jun. 20, 2024
Int. Cl. H01L 21/28 (2025.01); H10D 64/66 (2025.01)
CPC H01L 21/28088 (2013.01) [H01L 21/28185 (2013.01); H10D 64/667 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
gate spacers over a substrate; and
a gate structure disposed between the gate spacers, the gate structure comprising:
an interfacial layer over the substrate;
a metal oxide layer over the interfacial layer;
a first metal nitride layer over the metal oxide layer;
a second metal nitride layer over the first metal nitride layer, wherein the second metal nitride layer includes TaN or a nitride compound containing Ti and Ta; and
a tungsten-containing material interposing the first metal nitride layer and the second metal nitride layer.