US 12,334,346 B2
Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic device
Simone Rascuna', Catania (IT); Paolo Badala', Acireale (IT); Anna Bassi, Gravina di Catania (IT); Mario Giuseppe Saggio, Aci Bonaccorsi (IT); and Giovanni Franco, Viagrande (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Aug. 31, 2023, as Appl. No. 18/459,273.
Application 18/459,273 is a division of application No. 17/190,722, filed on Mar. 3, 2021, granted, now 11,784,049.
Claims priority of application No. 102020000004696 (IT), filed on Mar. 5, 2020.
Prior Publication US 2023/0411158 A1, Dec. 21, 2023
Int. Cl. H01L 21/04 (2006.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01)
CPC H01L 21/0485 (2013.01) [H01L 21/0495 (2013.01); H10D 62/8325 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a substrate of silicon carbide (SiC), the substrate having a front side and a back side opposite to each other along a direction;
a structural layer of SiC extending at the front side of the substrate, the structural layer having a first side opposite the front side of the substrate;
active regions extending in the first side of the structural layer, the active regions configured to generate or conduct electric current during the use of the electronic device;
a first electric terminal extending on the structural layer, the first electric terminal entirely covering the first side of the structural layer;
a passivation layer entirely separated from the structural layer by the first electric terminal, the passivation layer covering the active regions along a first direction and having a central opening;
an intermediate layer of compounds of a first metal at the back side of the substrate, the first metal including at least one of Titanium, Molybdenum, Tantalum, Tungsten, or Cobalt; and
a second electric terminal extending on the intermediate layer.