US 12,334,345 B2
Dynamic random access memory device with active regions of different profile roughness and method for forming the same
Yaoguang Xu, Jinjiang (CN); Hsien-Shih Chu, Kaohsiung (TW); Yun-Fan Chou, Taichung (TW); Yu-Cheng Tung, Kaohsiung (TW); and Chaoxiong Wang, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Jul. 28, 2021, as Appl. No. 17/386,575.
Claims priority of application No. 202110587180.8 (CN), filed on May 27, 2021; and application No. 202121165979.X (CN), filed on May 27, 2021.
Prior Publication US 2022/0384191 A1, Dec. 1, 2022
Int. Cl. H01L 21/033 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/0338 (2013.01) [H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H10B 12/00 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A dynamic random access memory (DRAM), comprising:
a substrate;
a plurality of first active regions disposed on the substrate and arranged end-to-end along a first direction; and
a plurality of second active regions disposed between the first active regions and arranged end-to-end along the first direction and staggered with the first active regions along a second direction; and
two swelling portions connected to opposite side edges of each of the second active regions and respectively protruding toward a second trench between the ends of the first active regions, wherein a distance along the second direction from one of the two swelling portions to a nearest one of the first active regions is smaller than a distance along the second direction between the second active regions and the first active regions.