US 12,334,343 B2
Substrate processing method and substrate processing system
Toru Hisamatsu, Miyagi (JP); Takayuki Katsunuma, Miyagi (JP); Shinya Ishikawa, Miyagi (JP); Yoshihide Kihara, Miyagi (JP); and Masanobu Honda, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Apr. 4, 2024, as Appl. No. 18/626,719.
Application 18/626,719 is a division of application No. 17/298,332, granted, now 11,955,337, previously published as PCT/JP2019/027722, filed on Jul. 12, 2019.
Claims priority of application No. 2018-225894 (JP), filed on Nov. 30, 2018.
Prior Publication US 2024/0282578 A1, Aug. 22, 2024
Int. Cl. H01L 21/033 (2006.01); H01L 21/311 (2006.01); C23C 16/04 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/31144 (2013.01); C23C 16/042 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a chamber;
a substrate support disposed in the chamber;
a gas supply configured to supply a gas into the chamber; and
a controller configured to control an overall operation of the substrate processing apparatus and execute a process comprising:
(a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer;
(b) forming a film on the patterned mask;
(c) forming a reaction layer on the film; and
(d) removing the reaction layer by applying energy to the reaction layer,
wherein in the step (c), a temperature of the substrate is set according to a thickness of the reaction layer to be formed.