US 12,334,339 B2
Manufacturing method of semiconductor device
Shosuke Nakabayashi, Nisshin (JP); Masatake Nagaya, Nisshin (JP); Chiaki Sasaoka, Nagoya (JP); Shoichi Onda, Nagoya (JP); Jun Kojima, Nagoya (JP); Daisuke Kawaguchi, Hamamatsu (JP); Ryuji Sugiura, Hamamatsu (JP); Toshiki Yui, Hamamatsu (JP); Keisuke Hara, Hamamatsu (JP); and Tomomi Aratani, Hamamatsu (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); and HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); MIRISE Technologies Corporation, Nisshin (JP); National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); and HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
Filed on Mar. 23, 2023, as Appl. No. 18/188,821.
Claims priority of application No. 2022-063947 (JP), filed on Apr. 7, 2022.
Prior Publication US 2023/0326748 A1, Oct. 12, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01)
CPC H01L 21/02389 (2013.01) [H01L 21/268 (2013.01); H01L 21/304 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor device, comprising:
forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions;
forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam to the compound semiconductor substrate;
dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and
forming a metal film covering a divided surface of the first part while exposing the gas vent recess and a peripheral portion of the gas vent recess on the divided surface,
wherein
the divided surface of the first part is a surface separated from the second part when the first part and the second part are divided and is opposite to the first surface of the compound semiconductor substrate in a thickness direction, and
the forming of the metal film includes:
forming a resist to cover an inner surface of the gas vent recess and the peripheral portion of the gas vent recess on the divided surface, the resist having a first thickness on the peripheral portion;
arranging the metal film to cover the divided surface and the resist, the metal film having a second thickness smaller than the first thickness of the resist; and
after the arranging of the metal film having the second thickness, removing the resist.