US 12,334,336 B2
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
Yoshitomo Hashimoto, Toyama (JP); and Katsuyoshi Harada, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Jan. 12, 2022, as Appl. No. 17/574,245.
Claims priority of application No. 2021-005886 (JP), filed on Jan. 18, 2021.
Prior Publication US 2022/0230870 A1, Jul. 21, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/45544 (2013.01); C23C 16/52 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
forming a film in a concave portion provided on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including:
(a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion;
(b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and
(c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate,
wherein both the adsorption inhibitor and the precursor contain a main element constituting the film and a halogen element.