US 12,334,335 B2
Method of optimizing film deposition process in semiconductor fabrication by using gas sensor
Rei-Lin Chu, Hsinchu (TW); Chih-Ming Chen, Hsinchu (TW); Chung-Yi Yu, Hsinchu (TW); and Yeur-Luen Tu, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jan. 6, 2022, as Appl. No. 17/569,819.
Application 17/569,819 is a continuation of application No. 16/786,870, filed on Feb. 10, 2020, granted, now 11,232,946.
Prior Publication US 2022/0139695 A1, May 5, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); B23K 26/14 (2014.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/0228 (2013.01) [B23K 26/14 (2013.01); H01L 21/02057 (2013.01); H01L 21/67161 (2013.01); H01L 21/67207 (2013.01); H01L 21/3065 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for processing a semiconductor substrate, comprising:
introducing a first processing gas of an atomic layer deposition (ALD) process on the semiconductor substrate in a chamber;
introducing a second processing gas of the ALD process on the semiconductor substrate in the chamber;
creating a first exhaust flow from the chamber;
monitoring a concentration of the first processing gas of the ALD process in the first exhaust flow; and
in response to the monitored concentration of the first processing gas of the ALD process in the first exhaust flow, introducing a first cleaning gas into the chamber when the semiconductor substrate is in the chamber.