US 12,334,334 B2
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
Yoshitomo Hashimoto, Toyama (JP); Tomoki Fuji, Toyama (JP); and Hiroki Yamashita, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jan. 6, 2022, as Appl. No. 17/569,559.
Claims priority of application No. 2021-013923 (JP), filed on Jan. 29, 2021.
Prior Publication US 2022/0246422 A1, Aug. 4, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/45534 (2013.01); C23C 16/45563 (2013.01); H01L 21/02205 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
forming a film in a concave portion provided on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including:
(a) supplying a precursor to the substrate;
(b) supplying a nitrogen-containing reactant to the substrate; and
(c) supplying an oxygen-containing reactant to the substrate,
wherein in (c), an oxide layer is formed by oxidizing a layer, which has been formed in the concave portion before (c) is performed, and an oxidation rate of the oxide layer formed in an upper portion in the concave portion is made higher than an oxidation rate of the oxide layer formed in a lower portion in the concave portion.