US 12,334,332 B2
Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
Bhadri N. Varadarajan, Beaverton, OR (US); Matthew Scott Weimer, Chicago, IL (US); Galbokka Hewage Layan Savithra, Lake Oswego, OR (US); Bo Gong, Sherwood, OR (US); and Zhe Gui, Beaverton, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Jul. 24, 2018, as Appl. No. 16/044,371.
Application 16/044,371 is a continuation in part of application No. 14/616,435, filed on Feb. 6, 2015.
Application 14/616,435 is a continuation in part of application No. 13/494,836, filed on Jun. 12, 2012.
Application 14/616,435 is a continuation in part of application No. 13/907,699, filed on May 31, 2013, granted, now 9,234,276, issued on Jan. 12, 2016.
Prior Publication US 2018/0330945 A1, Nov. 15, 2018
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/32 (2006.01); C23C 16/452 (2006.01); C23C 16/52 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H10D 64/66 (2025.01); H10D 30/60 (2025.01)
CPC H01L 21/02167 (2013.01) [C23C 16/045 (2013.01); C23C 16/325 (2013.01); C23C 16/452 (2013.01); C23C 16/52 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H10D 64/671 (2025.01); H10D 64/679 (2025.01); H01L 21/7682 (2013.01); H01L 2221/1047 (2013.01); H10D 30/60 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A method of depositing a silicon carbide film on a substrate, the method comprising:
providing a substrate having one or more recessed features in a reaction chamber;
flowing a silicon-containing precursor into the reaction chamber towards the substrate, wherein the silicon-containing precursor has at least two hydrogen atoms bonded to a silicon atom;
flowing a co-reactant into the reaction chamber along with the silicon-containing precursor along a flow path without exposure to plasma, wherein the silicon-containing precursor and co-reactant are flowed into the reaction chamber via one or more gas outlets downstream from a remote plasma source, wherein the co-reactant is a hydrocarbon molecule;
generating, from a hydrogen source gas, radicals of hydrogen in the remote plasma source that are generated upstream of the silicon-containing precursor and the co-reactant; and
introducing continuously the radicals of hydrogen into the reaction chamber and towards the substrate, wherein the radicals of hydrogen are in a ground state to react with the silicon-containing precursor and the co-reactant in a chemical vapor deposition (CVD) reaction to form a doped or undoped silicon carbide film on the substrate having a conformality between 80% and 100% in the one or more recessed features of the substrate.