US 12,334,331 B2
Substrate processing method and plasma processing apparatus
Takayuki Katsunuma, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Aug. 27, 2021, as Appl. No. 17/458,996.
Claims priority of application No. 2020-144390 (JP), filed on Aug. 28, 2020; and application No. 2021-006624 (JP), filed on Jan. 19, 2021.
Prior Publication US 2022/0068629 A1, Mar. 3, 2022
Int. Cl. H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0212 (2013.01) [H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
(a) adsorbing a precursor from a precursor gas to a side wall surface of a substrate, the side wall surface defining a recess in the substrate; and
(b) forming a film from the precursor on the side wall surface by supplying a first chemical species to the substrate and suppressing an increase of a thickness of the film by supplying a second chemical species to the substrate, the first chemical species being supplied from plasma generated from a first gas and the second chemical species being supplied from plasma generated from a second gas, and
wherein as (a) and (b) are alternately repeated, a radio-frequency power and an electrical bias to form the plasma are applied during (b), wherein there is no radio-frequency power and no electrical bias applied during (a).