| CPC H01L 21/02101 (2013.01) [B08B 7/0021 (2013.01); B08B 13/00 (2013.01); H01L 21/67028 (2013.01); H01L 21/67034 (2013.01)] | 19 Claims |
|
1. An apparatus for treating a substrate using a treating fluid in a supercritical state, the apparatus comprising:
a chamber configured to provide a treating space for treating the substrate;
a substrate support within the chamber and configured to support the substrate when the substrate is loaded into the chamber;
a first supply port in a lower wall of the chamber, wherein the first supply port is connected to a first supply line that is configured to supply the treating fluid to a portion of the treating space located below the substrate;
an exhaust port in the lower wall of the chamber and spaced apart from the first supply port by a first spacing, wherein the exhaust port is connected to an exhaust line that is configured to exhaust the treating fluid from the chamber;
a branch line branching from the exhaust line and at a position of the exhaust line upstream of an exhaust valve installed at the exhaust line, such that the branch line is a bypass line that bypasses the exhaust valve, wherein the branch line has an orifice, such that the branch line is always open, wherein both ends of the branch line are connected to the exhaust line; and
a controller configured to control supply and exhaust of the treating fluid,
wherein in a pressure increasing step of increasing a pressure in the treating space from a pressure lower than a critical pressure of the treating fluid to a treating pressure higher than the critical pressure, the controller is configured to control a supply amount of the treating fluid supplied from the first supply port so as to control flow of the treating fluid supplied from the first supply port and then exhausted through the exhaust port,
wherein the branch line has no valve.
|