US 12,334,329 B2
Substrate processing method
Ji Hoon Kim, Gwangju-Si (KR); and Chul Joo Hwang, Gwangju-Si (KR)
Assigned to JUSUNG ENGINEERING CO., LTD., (KR)
Appl. No. 18/265,234
Filed by JUSUNG ENGINEERING CO., LTD., Gwangju-Si (KR)
PCT Filed Dec. 24, 2021, PCT No. PCT/KR2021/019884
§ 371(c)(1), (2) Date Jun. 2, 2023,
PCT Pub. No. WO2022/149777, PCT Pub. Date Jul. 14, 2022.
Claims priority of application No. 10-2021-0001598 (KR), filed on Jan. 6, 2021.
Prior Publication US 2024/0030022 A1, Jan. 25, 2024
Int. Cl. H01L 21/02 (2006.01); B08B 7/00 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/02049 (2013.01) [B08B 7/0035 (2013.01); H01J 37/32449 (2013.01); H01J 2237/335 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A substrate processing method that processes a substrate loaded into a chamber, comprising:
supplying a nitrogen-containing gas to an inner space of a plasma generator disposed outside the chamber;
activating the nitrogen-containing gas in the inner space;
supplying a hydrogen-containing gas to the inner space; and
supplying the nitrogen-containing gas activated in the inner space and the hydrogen-containing gas onto the substrate;
wherein the supplying of the hydrogen-containing gas supplies the hydrogen-containing gas on a path through which the activated nitrogen-containing gas is moved into the chamber,
wherein at least a portion of the hydrogen-containing gas supplied to the inner space is activated by the activated nitrogen-containing gas on the path through which the activated nitrogen-containing gas is moved into the chamber.