US 12,334,316 B2
Plasma processing apparatus and plasma processing method
Takamasa Ichino, Tokyo (JP); and Kohei Sato, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Appl. No. 17/276,730
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Apr. 21, 2020, PCT No. PCT/JP2020/017141
§ 371(c)(1), (2) Date Mar. 16, 2021,
PCT Pub. No. WO2021/214854, PCT Pub. Date Oct. 28, 2021.
Prior Publication US 2022/0115216 A1, Apr. 14, 2022
Int. Cl. H01J 37/32 (2006.01); H01L 21/3065 (2006.01)
CPC H01J 37/32724 (2013.01) [H01L 21/3065 (2013.01); H01J 2237/334 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A plasma processing method in which a wafer to be processed is mounted on a sample stand arranged in a processing chamber inside a vacuum container and plasma is formed in the processing chamber to process the wafer,
wherein the sample stand having a cylindrical shape has therein a plurality of heaters which are arranged in three or more regions in a radial direction including a circular region concentrically arranged around a center and ring-like regions surrounding an outer periphery of the circular region on a plurality of radii in the radial direction from the center toward an outer peripheral side and which include one of the plurality of heaters arranged in each of a plurality of arc-like regions divided in the circumferential direction around the center of at least one of the ring-like regions, and a plurality of temperature sensors which are arranged inside the sample stand under the respective regions in the radial direction and a number of which is smaller than that of the plurality of heaters,
the plasma processing method comprising:
a first step and a second step of processing the wafer; and
a transition step which occurs between the first and second steps of processing the wafer in which a temperature of the wafer or the sample stand is changed from a first temperature in the first step to a second temperature in the second step,
wherein the transition step further comprises adjusting an output of each of the plurality of heaters by a feedback control of an output from the temperature sensor so that the temperature of the sample stand becomes closer to a target value, and
wherein the second processing step after the transition step further comprises adjusting an amount of power supplied to each of the plurality of heaters to match or maintain a predetermined value which is detected by using data obtained in advance indicating a relation between the temperature of the sample stand and the amount of power supplied to each of the plurality of heaters.