US 12,334,313 B2
Plasma processing apparatus and plasma processing method
Hwajun Jung, Hwaseong-si (KR); Mitsunori Ohata, Miyagi (JP); Yuki Hosaka, Miyagi (JP); and Wan Sung Jin, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Mar. 16, 2022, as Appl. No. 17/696,280.
Claims priority of application No. 2021-043853 (JP), filed on Mar. 17, 2021.
Prior Publication US 2022/0301834 A1, Sep. 22, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32651 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32816 (2013.01); H01J 2237/182 (2013.01); H01J 2237/2007 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber;
an annular baffle plate disposed so as to surround the substrate support, the annular baffle plate having a plurality of openings;
a first holeless annular plate disposed below the annular baffle plate and disposed on a sidewall of the plasma processing chamber;
a second holeless annular plate disposed below the first holeless annular plate, the second holeless annular plate having an annular overlapping portion vertically overlapping with a part of the first holeless annular plate such that an annular gap is formed between the second holeless annular plate and a sidewall of the substrate support, the annular gap having a non-zero width of 1.0 mm or less;
a pressure detector configured to detect a pressure in the plasma processing chamber; and
at least one actuator configured to vertically move at least one of the first and second holeless annular plates so as to change a distance between the first holeless annular plate and the second holeless annular plate based on the detected pressure.