US 12,334,308 B2
Batch-type apparatus for atomic layer etching (ALE), and ALE method and semiconductor device manufacturing method based on the same apparatus
Hanjin Lim, Seoul (KR); Younsoo Kim, Yongin-si (KR); Sunmin Moon, Yongin-si (KR); Jungmin Park, Seoul (KR); and Hyungsuk Jung, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 1, 2022, as Appl. No. 17/683,506.
Claims priority of application No. 10-2021-0111874 (KR), filed on Aug. 24, 2021.
Prior Publication US 2023/0062485 A1, Mar. 2, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/3244 (2013.01) [H01J 37/32357 (2013.01); H01J 37/32522 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 37/32899 (2013.01); H01L 21/67069 (2013.01); H01J 2237/201 (2013.01); H01J 2237/334 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A batch-type apparatus for atomic layer etching (ALE), the batch-type apparatus comprising a wafer stacking container that is configured to have therein a plurality of wafers that are arranged in a vertical direction, and the batch-type apparatus further comprising at least one process chamber, each of the at least one process chamber comprising:
an inner tube that extends in the vertical direction, and configured to include the wafer stacking container therein;
a plurality of nozzles arranged in a first outer portion in the inner tube, the plurality of nozzles extending in the vertical direction and configured to supply a gas to the plurality of wafers; and
a heater that surrounds the inner tube and is configured to adjust a temperature in the inner tube,
wherein each of the plurality of nozzles includes a plurality of gas injection holes, the plurality of gas injection holes provided at heights corresponding to heights of the plurality of wafers, respectively,
wherein the inner tube includes a gas outlet in a second outer portion in the inner tube, opposite to the first outer portion in a first horizontal direction,
wherein at least one nozzle among the plurality of nozzles comprises an inverted U shape in an upper portion of the at least one nozzle, and the plurality of gas injection holes of the least one nozzle are disposed along the inverted U shape and along a portion of the at least one nozzle that extends from an end of the at least one nozzle to the upper portion of the at least one nozzle, and
wherein the end of the at least one nozzle is configured to receive the gas and supply the gas to the upper portion of the at least one nozzle.