US 12,334,276 B2
Method for forming of perovskite-based optoelectronic devices
Yinghuan Kuang, Genk (BE); Tom Aernouts, Westmeerbeek (BE); Wenya Song, Heverlee (BE); and Stijn Lammar, Heverlee (BE)
Assigned to Imec vzw, Leuven (BE); Katholieke Universiteit Leuven, Leuven (BE); and Universiteit Hasselt, Hasselt (BE)
Filed by IMEC VZW, Leuven (BE); Katholieke Universiteit Leuven, KU LEUVEN R&D, Leuven (BE); and UNIVERSITEIT HASSELT, Hasselt (BE)
Filed on Dec. 9, 2022, as Appl. No. 18/064,075.
Claims priority of application No. 21215793 (EP), filed on Dec. 19, 2021.
Prior Publication US 2023/0197353 A1, Jun. 22, 2023
Int. Cl. H01G 9/00 (2006.01); H01G 9/20 (2006.01); H10K 30/30 (2023.01); H10K 30/40 (2023.01); H10K 71/16 (2023.01)
CPC H01G 9/0036 (2013.01) [H01G 9/2009 (2013.01); H10K 30/30 (2023.02); H10K 30/40 (2023.02); H10K 71/164 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A method for forming an intermediate structure in the formation of an optoelectronic device, wherein the method comprises:
a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising:
an active layer comprising an active material having a perovskite crystal structure,
an n-type semiconducting layer comprising a fullerene over the active layer, and
an energy alignment layer comprising a lithium halide, a magnesium halide, Al2O3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface; and
b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W·cm−2 and at a temperature of the stack of layers of at most 100° C.