US 12,334,238 B2
MRAM stacks, MRAM devices and methods of forming the same
Shy-Jay Lin, Hsinchu County (TW); Wilman Tsai, Saratoga, CA (US); and Ming-Yuan Song, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 27, 2023, as Appl. No. 18/519,085.
Application 18/519,085 is a continuation of application No. 17/876,587, filed on Jul. 29, 2022, granted, now 11,862,373.
Application 17/876,587 is a continuation of application No. 16/805,863, filed on Mar. 2, 2020, granted, now 11,456,100, issued on Sep. 27, 2022.
Claims priority of provisional application 62/849,163, filed on May 17, 2019.
Prior Publication US 2024/0087786 A1, Mar. 14, 2024
Int. Cl. H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01F 41/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H01F 10/329 (2013.01) [G11C 11/161 (2013.01); H01F 10/3259 (2013.01); H01F 10/3286 (2013.01); H01F 41/32 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory stack, comprising:
a heavy metal layer;
a synthetic free layer disposed over the heavy metal layer and comprising:
a first free layer with a first magnetic anisotropy perpendicular to a upper surface of the heavy metal layer;
a second free layer with a second magnetic anisotropy parallel to the upper surface of the heavy metal layer; and
a non-magnetic metal spacer disposed between and in direct contact with the first free layer and the second free layer;
a reference layer disposed over the synthetic free layer; and
a synthetic anti-ferromagnetic layer disposed over the reference layer and configured to fix a magnetic anisotropy of the reference layer.