US 12,334,180 B2
Memory module and memory system having the same
Kyudong Lee, Seoul (KR); Young Yun, Yongin-si (KR); Sungjoo Park, Anyang-si (KR); and Jinseong Yun, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 7, 2022, as Appl. No. 17/938,780.
Application 17/938,780 is a continuation of application No. 16/709,984, filed on Dec. 11, 2019, abandoned.
Claims priority of application No. 10-2019-0047980 (KR), filed on Apr. 24, 2019; and application No. 10-2019-0090970 (KR), filed on Jul. 26, 2019.
Prior Publication US 2023/0035640 A1, Feb. 2, 2023
Int. Cl. G11C 5/14 (2006.01)
CPC G11C 5/147 (2013.01) 20 Claims
OG exemplary drawing
 
1. An operating method of a memory module, comprising:
generating position data related to a corresponding module slot of a main board by a serial presence detector when the memory module is inserted into the corresponding module slot of the main board;
transferring the position data to a power management integrated circuit using serial data and a serial clock signal of the corresponding module slot;
generating a frequency offset code in response to the position data by the power management integrated circuit;
adjusting a switching frequency of an internal clock signal according to the frequency offset code;
operating a first voltage regulator of the power management integrated circuit at a first switching frequency of the internal clock signal; and
operating a second voltage regulator of the power management integrated circuit at a second switching frequency of the internal clock signal,
wherein the first switching frequency and the second switching frequency are different.