US 12,334,177 B2
Semiconductor memory device
Masayoshi Tagami, Kuwana Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Jul. 25, 2023, as Appl. No. 18/225,916.
Application 18/225,916 is a continuation of application No. PCT/JP2021/003888, filed on Feb. 3, 2021.
Prior Publication US 2023/0368818 A1, Nov. 16, 2023
Int. Cl. G11C 5/06 (2006.01); H01L 25/065 (2023.01); H10B 41/10 (2023.01); H10B 41/20 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 80/00 (2023.01)
CPC G11C 5/063 (2013.01) [H01L 25/0657 (2013.01); H10B 41/10 (2023.02); H10B 41/20 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 80/00 (2023.02); H01L 2225/06506 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a first chip and a second chip bonded via a plurality of bonding electrodes, wherein
the first chip includes a first region and a second region,
the first region includes:
a plurality of memory cells;
a plurality of bit lines connected to the plurality of memory cells;
a plurality of word lines connected to the plurality of memory cells; and
a plurality of first bonding electrodes that are a part of the plurality of bonding electrodes and electrically connected to the plurality of bit lines,
the second region includes:
a plurality of contacts electrically connected to the plurality of word lines; and
a plurality of second bonding electrodes that are a part of the plurality of bonding electrodes and electrically connected to the plurality of contacts,
the plurality of first bonding electrodes include a third bonding electrode and a fourth bonding electrode adjacent in a first direction,
the plurality of second bonding electrodes include a fifth bonding electrode and a sixth bonding electrode adjacent in the first direction, and
a distance from a center position in the first direction of the third bonding electrode to a center position in the first direction of the fourth bonding electrode and a distance from a center position in the first direction of the fifth bonding electrode to a center position in the first direction of the sixth bonding electrode are matched in a range of from 90% to 110%.