US 12,334,168 B2
Flash memory module testing method and associated memory controller and memory device
Chiu-Han Chang, Taipei (TW); and Yu-Ting Chen, New Taipei (TW)
Assigned to Silicon Motion, Inc., Hsinchu County (TW)
Filed by Silicon Motion, Inc., Hsinchu County (TW)
Filed on Aug. 22, 2023, as Appl. No. 18/236,409.
Claims priority of application No. 111147753 (TW), filed on Dec. 13, 2022.
Prior Publication US 2024/0194282 A1, Jun. 13, 2024
Int. Cl. G11C 29/10 (2006.01)
CPC G11C 29/10 (2013.01) 11 Claims
OG exemplary drawing
 
1. A method for performing a test upon a flash memory module, comprising:
sequentially performing data writing upon a plurality of first blocks of a first group in the flash memory module;
after the plurality of first blocks of a first group are written, starting to read the plurality of first blocks of the first group to determine whether there is any abnormal block in the plurality of first blocks and generating a first test result;
after the plurality of first blocks are read, sequentially performing data writing upon a plurality of second blocks of a second group in the flash memory module, wherein the plurality of second blocks are different from the plurality of first blocks; and
after the plurality of second blocks of a first group are written, starting to read the plurality of second blocks of the second group to determine whether there is any abnormal block in the plurality of second blocks and generating a second test result;
wherein each of the plurality of first blocks and the plurality of second blocks is a smallest erase unit in the flash memory module;
wherein the method further comprises:
determining a number of first blocks of the first group according to a plurality of temperature information of the flash memory module;
wherein the step of determining the number of first blocks of the first group according to the plurality of temperature information of the flash memory module comprises:
determining the number of first blocks of the first group according to an initial temperature information of a first of the plurality of first blocks of the first group where data writing is performed and a temperature information of subsequent blocks in the flash memory module where data writing is performed;
wherein the step of determining the number of first blocks of the first group according to the plurality of temperature information of the flash memory module comprises:
recording the initial temperature information before data writing is performed upon the first of the plurality of first blocks of the first group or the initial temperature information when data writing is performed upon the first of the plurality of first blocks of the first group;
sequentially performing data writing upon the subsequent blocks in the flash memory module, and keeping detecting a current temperature information of the flash memory module; and
in response to a difference between the current temperature information and the initial temperature information being greater than a critical value or being within a specific range, stopping performing data writing upon the subsequent blocks of the flash memory module, and regarding blocks that are located after the first of the plurality of first blocks of the first group and have completed data writing as the plurality of first blocks of the first group.