US 12,334,155 B2
Non-volatile memory device, storage device including the same, and read method thereof
Minseok Kim, Hwaseong-si (KR); and Hyunggon Kim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 16, 2022, as Appl. No. 18/067,224.
Application 18/067,224 is a continuation of application No. 17/380,289, filed on Jul. 20, 2021, granted, now 11,532,361.
Claims priority of application No. 10-2020-0138431 (KR), filed on Oct. 23, 2020.
Prior Publication US 2023/0123963 A1, Apr. 20, 2023
Int. Cl. G11C 7/00 (2006.01); G11C 7/10 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01)
CPC G11C 16/102 (2013.01) [G11C 7/1039 (2013.01); G11C 7/1063 (2013.01); G11C 7/109 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a non-volatile memory device, the method comprising:
receiving a read command and an address;
determining whether to perform a data recovery read operation in response to the read command;
performing the data recovery read operation when the data recovery read operation is required; and
performing a normal read operation when the data recovery read operation is not required,
wherein the data recovery read operation includes obtaining aggressor group information from an adjacent memory cell connected to an adjacent wordline corresponding to a selected wordline according to the address, and recovering data corresponding to the obtained aggressor group information in a memory cell connected to the selected wordline, repeatedly on each of a plurality of aggressor groups.