US 12,334,154 B2
Write-once memory encoded data
Xiangyu Tang, San Jose, CA (US); Eric N. Lee, San Jose, CA (US); Akira Goda, Setagaya (JP); Kishore K. Muchherla, Fremont, CA (US); Haibo Li, Cupertino, CA (US); and Huai-Yuan Tseng, San Ramon, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 14, 2022, as Appl. No. 17/944,692.
Claims priority of provisional application 63/348,435, filed on Jun. 2, 2022.
Prior Publication US 2023/0395153 A1, Dec. 7, 2023
Int. Cl. G11C 7/22 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01)
CPC G11C 16/102 (2013.01) [G11C 16/08 (2013.01); G11C 16/14 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A method, comprising: receiving first data; determining a number of programming operations performed on a plurality of flash memory cells subsequent to a most recent erase operation performed on the plurality of flash memory cells based on a first counter value, wherein the first counter value indicates the number of programming operations performed on the plurality of flash memory cells;
determining a write-once memory (WOM) encoding to apply to the first data based on the first counter value;
encoding the first data to provide a WOM encoded data based on the determined; and
storing first WOM encoded data, based at least in part on the determined number of programming operations and the first counter value, within a number of the plurality of flash memory cells.