US 12,334,144 B2
Memory device including booster circuit for tracking word line
Hyunsung Hong, Kanata (CA)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 18, 2022, as Appl. No. 17/890,693.
Claims priority of provisional application 63/344,367, filed on May 20, 2022.
Prior Publication US 2023/0377638 A1, Nov. 23, 2023
Int. Cl. G11C 11/418 (2006.01)
CPC G11C 11/418 (2013.01) 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a set of memory cells coupled to a word line;
a tracking cell coupled to a tracking word line and a tracking bit line;
a tracking booster circuit coupled to the tracking word line, the tracking booster circuit configured to boost a first edge of a first pulse applied to the tracking word line thereby causing the first edge to become sharper, the tracking cell configured to generate a second pulse at the tracking bit line, in response to the first pulse having the boosted first edge; and
a word line controller configured to apply a third pulse to the word line, based on the second pulse.