US 12,334,139 B2
Memory device having merged banks on substrate, and method for operating memory device
Wenliang Chen, Hsinchu County (TW)
Assigned to AP MEMORY TECHNOLOGY CORPORATION, Hsinchu County (TW)
Filed by AP MEMORY TECHNOLOGY CORPORATION, Hsinchu County (TW)
Filed on Jun. 9, 2023, as Appl. No. 18/332,519.
Claims priority of provisional application 63/353,019, filed on Jun. 16, 2022.
Prior Publication US 2023/0410884 A1, Dec. 21, 2023
Int. Cl. G11C 11/16 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01)
CPC G11C 11/4087 (2013.01) [G11C 11/4085 (2013.01); G11C 11/4091 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
one or more memory blocks, wherein each memory block comprises:
a plurality of first sense amplifier circuits;
a plurality of row segments, the row segments and the first sense amplifier circuits being arranged alternately along a first direction, wherein each row segment comprises a plurality of memory cells arranged in rows and columns, and each column of memory cells extends in the first direction; the row segments are divided into N groups of row segments, and N is greater than one; and
a plurality of row decoders, coupled to the row segments respectively, the row decoders being divided into N groups of row decoders.