US 12,334,126 B2
Magnetic memory using spin current, operating method thereof, and electronic apparatus including magnetic memory
Kwangseok Kim, Seoul (KR); Je-Geun Park, Seoul (KR); Kaixuan Zhang, Seoul (KR); and Jingyuan Cui, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and Seoul National University R&DB Foundation, Seoul (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Filed on Oct. 12, 2022, as Appl. No. 17/964,373.
Claims priority of application No. 10-2022-0053811 (KR), filed on Apr. 29, 2022.
Prior Publication US 2023/0352072 A1, Nov. 2, 2023
Int. Cl. G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01)
CPC G11C 11/18 (2013.01) [G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/101 (2023.02); H10N 52/80 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A magnetic memory comprising:
a first wiring;
a second wiring spaced apart from the first wiring and intersecting the first wiring; and
a data storage layer between the first wiring and the second wiring and in contact with the first and second wirings, wherein
the data storage layer comprises:
a pinned layer having a fixed magnetic moment;
a free layer spaced apart from the pinned layer and having a magnetic moment that is switchable by using a spin current as a spin-orbit torque (SOT) layer; and
an insulating tunnel barrier layer between the pinned layer and the free layer, wherein a wiring contacting the free layer from among the first and second wirings includes a conductive wiring that does not have a spin Hall effect, and
the free layer comprises a two-dimensional material having a spin Hall effect, magnetic properties, and metallic properties,
wherein one of the first wiring and the second wiring is a bit line, and wherein in a cross-point of one of the first wiring and one of the second wiring, the data storage layer is arranged between the cross-point of the first wiring and the second wiring.