US 12,333,233 B2
Simulation of atomistic defects in nanoelectronics using polyhedral meshes
Luca Vandelli, Scandiano (IT); Matteo Bertocchi, Mirandola (IT); Stefano Dominici, Parma (IT); and Luca Larcher, Reggio Emilia (IT)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 12, 2022, as Appl. No. 17/670,446.
Prior Publication US 2023/0259687 A1, Aug. 17, 2023
Int. Cl. G06F 30/30 (2020.01); G06F 30/398 (2020.01); G06T 7/70 (2017.01); G06T 17/20 (2006.01)
CPC G06F 30/398 (2020.01) [G06T 7/70 (2017.01); G06T 17/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of simulating atomistic defects in electronic devices, the method comprising:
receiving an input mesh representing a device for simulation;
transforming the input mesh into a polyhedral mesh;
generating a distribution of defects in the polyhedral mesh;
for each defect in the distribution of defects:
identifying polyhedra in the polyhedral mesh that overlap with an effect of the defect;
distributing the effect of the defect to the polyhedra in the polyhedral mesh; and
simulating a behavior of the device, wherein the behavior is affected by the distribution of defects.