US 12,333,169 B2
Memory system for optimizing on-die termination settings of multi-ranks, method of operation of memory system, and memory controller
Youngdo Um, Suwon-si (KR); Taeyoung Oh, Suwon-si (KR); and Hoseok Seol, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 21, 2023, as Appl. No. 18/304,813.
Claims priority of application No. 10-2022-0051031 (KR), filed on Apr. 25, 2022; and application No. 10-2022-0091318 (KR), filed on Jul. 22, 2022.
Prior Publication US 2023/0342050 A1, Oct. 26, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0634 (2013.01) [G06F 3/0611 (2013.01); G06F 3/0673 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A memory system comprising:
a host system comprising a memory controller configured to control a read operation or a write operation for a plurality of memory ranks configured to share a signal line; and
a multi-rank memory device comprising a nonvolatile memory device configured to store on-die termination (ODT) information of the plurality of memory ranks,
wherein the memory controller is further configured to determine a target rank to be read or written, and transmit a read or write command comprising information about the determined target rank via the signal line, to the multi-rank memory device,
wherein the multi-rank memory device is further configured to perform a comparison of the ODT information of the plurality of memory ranks stored in the nonvolatile memory device with the information about the determined target rank received from the memory controller, determine a memory rank corresponding to the determined target rank and a memory rank corresponding to a non-target rank based on a result of the comparison and set an ODT value of the non-target rank, wherein the ODT value of the non-target rank during the write operation is different from the ODT value of the non-target rank during the read operation.