US 12,333,152 B2
Storage device
Kyungduk Lee, Seongnam-si (KR); Youngseop Shim, Seoul (KR); and Jongsung Na, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 21, 2022, as Appl. No. 17/990,789.
Claims priority of application No. 10-2021-0182376 (KR), filed on Dec. 20, 2021; and application No. 10-2022-0056696 (KR), filed on May 9, 2022.
Prior Publication US 2023/0195324 A1, Jun. 22, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/064 (2013.01); G06F 3/0679 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a memory device including a plurality of superblocks, wherein each superblock includes memory blocks included in a group of a plurality of non-volatile memories; and
a controller for controlling the memory device,
wherein the controller controls a first superblock to be erased to program data received from a host, controls the data to be programmed in the first superblock, controls the first superblock to be selected as a victim superblock for a garbage collection operation, and controls a media scanning operation to be performed on the memory device when a data duration is greater than a data duration threshold, wherein the data duration is an interval between a first time point, at which the first superblock is erased, and a second time point, at which the first superblock is selected as the victim superblock,
wherein the first superblock is one of the plurality of superblocks.