US 12,333,151 B2
Guaranteeing online services based on predicting failures of storage devices
Viacheslav Dubeyko, Los Angeles, CA (US); Neema Mashayekhi, Los Angeles, CA (US); Cong Wang, Los Angeles, CA (US); and Jian Wang, Beijing (CN)
Assigned to Lemon Inc., Grand Cayman (KY); and Beijing Youzhuju Network Technology Co., Ltd., Beijing (CN)
Filed by Lemon Inc., Grand Cayman (KY); and BEIJING YOUZHUJU NETWORK TECHNOLOGY CO., LTD., Beijing (CN)
Filed on Jul. 18, 2023, as Appl. No. 18/223,477.
Prior Publication US 2023/0359364 A1, Nov. 9, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0614 (2013.01) [G06F 3/0649 (2013.01); G06F 3/0679 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of guaranteeing online services based on predicting failures of storage devices, comprising:
extracting statistical data on a regular basis by each of a plurality of storage devices, wherein each of the plurality of storage devices comprise a set of NAND dies, and wherein each of the set of NAND dies is configured to measure and track a set of metrics indicating characteristics of each NAND die;
generating prediction data indicating potential failures of the plurality of storage devices;
sharing the prediction data with a host on a periodic basis;
creating, by the host, a strategy of decommissioning at least one of the plurality of storage devices and adding at least one new storage device based on the prediction data;
implementing data migration to the at least one new storage device before excluding the at least one of the plurality of storage devices based on the strategy;
wherein the method further comprises:
generating a sequence of measurements of the set of metrics by each of the set of NAND dies, wherein each measurement comprise a number of failed blocks and latencies of operations associated with each of the set of NAND dies;
comparing at least two measurements among the sequence of measurements; and
predicting a time point of a first or next block failure and predicting a speed value of latency growth associated with each of the set of NAND dies.