US 12,333,022 B2
Row access strobe (RAS) clobber and row hammer failure mitigation
Yang Lu, Boise, ID (US); Markus H. Geiger, Boise, ID (US); and Nathaniel J. Meier, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 8, 2023, as Appl. No. 18/166,363.
Application 18/166,363 is a division of application No. 18/160,293, filed on Jan. 26, 2023.
Claims priority of provisional application 63/303,550, filed on Jan. 27, 2022.
Prior Publication US 2023/0260590 A1, Aug. 17, 2023
Int. Cl. G06F 21/55 (2013.01); G06F 21/57 (2013.01); G11C 8/18 (2006.01); G11C 11/4078 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 29/52 (2006.01)
CPC G06F 21/577 (2013.01) [G06F 21/554 (2013.01); G11C 8/18 (2013.01); G11C 11/4078 (2013.01); G11C 29/022 (2013.01); G11C 29/50004 (2013.01); G11C 29/52 (2013.01); G06F 2221/034 (2013.01); G11C 2029/5002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
at least one memory including a plurality of memory cells disposed in rows and columns; and
a controller, communicatively coupled to the at least one memory;
wherein the controller maintains data integrity in the at least one memory by executing operations comprising:
receiving a row activation (ACT) command for a row;
starting a RAS counter and incrementing the RAS counter in a subsequent instance of an edge of a clock;
determining if a pre-charge (PRE) command has been received for the row, and if said pre-charge command has been received, setting the RAS counter to zero;
determining whether the RAS counter is greater than a RAS clobber counter threshold (RCCT) if said pre-charge command was not received;
triggering another row activation command for a second row (ACT+1) and setting the RAS counter to zero; and
incrementing the RAS counter at another edge of the clock when the RAS counter is greater than the RCCT.